2SD1615

S MD Type NPN Silicon Epitaxial Transistor 2SD1615 Transistors Features World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) *1 Total power dissipation at 25 Junction temperature Storage temperature * 1Pulse Test PW 10ms, Duty Cycle 50%. Ambient Temperature *2 Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 60 50 6 1 2 2.0 150 -55 to +150 Unit V V V A A W *2 When mounted on ceramic substrate of 16 cm2X 0.7 mm Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 60 V, IE = 0 A VEB = 6.0 V, IC = 0 A VCE = 2.0 V, IC = 100 mA 135 290 0.15 0.9 600 80 160 19 Min Typ Max 100 100 600 0.3 1.2 700 V V mV MHz pF Unit nA nA VCE(sat) IC = 1 A, IB = 50 mA VBE(sat) IC = 1 A, IB = 50 mA VBE fT Cob VCE = 2.0 V, IC = 50 mA VCE = 2.0 V, IE = -100 mA VCB = 10 V, IE = 0, f = 1.0 MHz hFE Classification Marking hFE GM 135 270 GL 200 400 GK 300 600 www.kexin.com.cn 1