2SD1618

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 20 15 5 0.7 1.5 500 1.3 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 SMD Type 2SD1618 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Output capacitance Symbol ICBO IEBO hFE fT VCE(sat) Testconditons VCB = 15V , IE = 0 VCB = 4V , IE = 0 VCE = 2V , IC = 50mA VCE = 2V , IC = 500mA VCE = 10V , IC = 50mA IC = 5mA , IB = 0.5mA IC = 100mA , IB = 10mA VBE(sat) IC = 100mA , IB = 10mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 Cob VCB = 10V , f = 1MHz Transistors Min Typ Max 0.1 0.1 Unit ìA ìA 140 60 250 10 30 0.8 20 15 5 8 560 MHz 25 80 1.2 mV mV V V V V pF hFE Classification Marking Rank hFE S 140 280 DA T 200 400 U 280 560 2 www.kexin.com.cn