2SD1620

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1620 Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high current. Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2×0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 30 25 6 3 5 500 1.3 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 3 A VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz 140 210 200 30 0.3 30 20 10 6 0.4 MHz pF V V V V V Min Typ Max 100 100 Unit nA nA VCE(sat) IC = 3 A , IB = 60 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEX IC = 1mA , VBE = 3 V V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 www.kexin.com.cn 1