2SD1623

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1623 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’ further miniaturization. s Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 6 2 4 0.5 1.3 150 -55 to +150 Unit V V V A A W W www.kexin.com.cn 1 SMD Type 2SD1623 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz 100 150 12 0.15 0.9 60 50 6 60 Min Typ Transistors Max 100 100 560 Unit nA nA MHz pF 0.4 1.2 V V V V V ns VCE(sat) IC = 1 A , IB = 50 mA VBE(sat) IC = 1 A , IB = 50 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton Storage time tstg 550 ns Turn-off time tf 30 ns hFE Classification Marking Rank hFE R 100 200 S 140 280 DF T 200 400 U 280 560 2 www.kexin.com.cn