2SD1664

S MD Type Medium Power Transistor 2SD1664 Transistors Features Low VCE(sat) Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) PW =20ms, duty=1/2 Collector Power Dissipation Jumction temperature Storage temperature Range * mounted on a 40x40x0.7mm ceramic board. PC * Tj Tstg Symbol VCBO VCEO VEBO IC Rating 40 32 5 1 2 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol ICBO IEBO Testconditons VCB = 20V , IE = 0 VEB = 4V , IC = 0 40 32 5 82 0.15 150 15 390 0.4 V MHz pF Min Typ Max 0.5 0.5 Unit ìA ìA V V V(BR)CBO IC = 50uA , IE = 0 V(BR)CEO IC = 1mA , IB = 0 V(BR)EBO IE = 50uA hFE VCE = -3V , IC = -0.1A VCE(sat) IC = 500mA , IB = 50mA fT Cob VCE = 5V , IE = -50mA , f = 100MHz VCB = 10V , IE = 0 , f = 1MHz hFE Classification Marking Rank hFE 82 P 180 120 DA Q 270 180 R 390 www.kexin.com.cn 1 SMD Type 2SD1664 Electrical Characteristics Curves Transistors 2 www.kexin.com.cn SMD Type 2SD1664 Transistors www.kexin.com.cn 3