2SD1758

S MD Type Medium Power Transistor 2SD1758 TO-252 Transistors Features Low VCE(sat), VCE(sat) = 0.5V (IC = 2A, IB = 0.2A). Epitaxial planar type +0.2 9.70 -0.2 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 NPN silicon transistor +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Tc = 25 Junction temperature Storage temperature * Pw=20ms. Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 40 32 5 2 2.5 1 10 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50ìA IC=1mA IE=50ìA VCB=20V VEB=4V VCE=3V,IC=0.5A 82 0.5 100 30 Testconditons Min 40 32 5 1 1 390 0.8 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=2A,IB=0.2A fT Cob VCE=5V, IE= -500mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Rank hFE P 82 180 Q 120 270 R 180 390 3 .8 0 www.kexin.com.cn 1