S MD Type
Medium Power Transistor 2SD1760
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
+0.2 9.70 -0.2
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB = 0.2A).
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature * Pw=100ms. Tc = 25 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 3 4.5 15 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Forward current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=40V VEB=4V 0.5 82 90 40 Testconditons Min 60 50 5 1 1 1 390 MHz pF Typ Max Unit V V V ìA ìA V
VCE(sat) IC=2A,IB=0.2A hFE fT Cob VCE=3V,IC=0.5A VCE=5V, IE= -500mA, f=30MHz VCB=10V, IE=0A, f=1MHz
hFE Classification
Rank hFE P 82 180 Q 120 270 R 180 390
3 .8 0
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