2SD1766

S MD Type Medium Power Transistor 2SD1766 SOT-89 4.50 +0.1 -0.1 Transistors Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Features Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB = 0.2A). +0.1 0.80-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 +0.1 4.00-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC IC (Pulse) * Collector power dissipation PC PC *2 Junction temperature Storage temperature *1. Pw=20ms. *2. 40 40 0.7mm Ceramic board. Tj Tstg 1 Rating 40 32 5 2 2.5 0.5 2 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50ìA IC=1mA IE=50ìA VCB=20V VEB=4V VCE=3V,IC=0.5A 82 0.5 100 30 Testconditons Min 40 32 5 1 1 390 0.8 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=2A,IB=0.2A fT Cob VCE=5V, IE= -500mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 DB Q 120 270 R 180 390 www.kexin.com.cn 1