2SD1767

S MD Type Medium Power Transistor 2SD1767 Transistors Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC IC (Pulse) * Collector power dissipation Junction temperature Storage temperature *1. Pw=10ms. *2. 40X40X0.7mm Ceramic board. PC PC *2 Tj Tstg 1 Rating 80 80 5 0.7 1 0.5 2 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Forward current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=2mA IE=50ìA VCB=50V VEB=4V 0.2 82 120 10 Testconditons Min 80 80 5 0.5 0.5 0.4 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=500mA,IB=50mA hFE fT Cob VCE=3V,IC=0.1A VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 DC Q 120 270 R 180 390 www.kexin.com.cn 1