2SD1781K

SMD S MD Type Medium Power Transistor 2SD1781K SOT-23 Transistors IC Unit: mm Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA +0.1 2.4-0.1 High current capacity in compact package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current * Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 32 5 0.8 1.5 200 150 -55 to +150 mW Unit V V V A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=20V VEB=4V 0.1 120 150 15 Testconditons Min 40 32 5 0.5 0.5 0.4 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC/IB=500mA/50mA hFE fT Cob VCE=3V, IC=100mA VCE=5V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE Q 120 270 AF R 180 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1