2SD1815

S MD Type High-Current Switching Applications 2SD1815 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. Excllent linearity of hFE. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 Fast switching time. +0.1 0.80-0.1 +0.15 0.50 -0.15 High fT. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 6 3 6 1 150 -55 to +150 Unit V V V A A W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SD1815 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Testconditons VCB = 100V , IE = 0 VEB = 4V , IC = 0 VCE = 5V , IC = 0.5A VCE = 5V , IC = 2A VCE = 10V , IC = 0.5A VCB = 10V , f = 1MHz IC = 1.5A , IB = 0.15A IC = 1.5A , IB = 0.15A 70 40 Transistors Min Typ Max 1 1 400 Unit ìA ìA 180 25 150 0.9 120 100 6 100 400 1.2 MHz pF mV V V V V ns V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO ton IE = 10ìA , IC = 0 Storage time tstg 900 ns Fall time tf 50 ns hFE Classification Rank hFE Q 70 140 R 100 200 S 140 280 T 200 400 2 www.kexin.com.cn