2SD1817

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1817 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High DC current gain. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max Electrical Connection 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Ta = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 1 15 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Symbol ICBO IEBO hFE Testconditons VCB = 60V , IE = 0 VEB = 5V , IC = 0 VCE = 2V , IC = 1A VCE = 2V , IC = 2A VCE(sat) IC = 2A , IB = 4mA VBE(sat) IC = 2A , IB = 4mA V(BR)CBO IC = 1mA , IE = 0 V(BR)CEO IC = 25mA , RBE = 80 60 2000 1000 1.5 2.0 V V V V Min Typ Max 10 2.5 Unit ìA mA 3 .8 0 www.kexin.com.cn 1