2SD1819A

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SD1819A Transistors IC Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 7 200 100 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE Testconditons VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10ìA, IE = 0 IC = 2mA, IB = 0 IE = 10ìA, IC = 0 VCE = 10V, IC = 2mA 60 50 7 160 0.1 150 3.5 460 0.3 V MHz pF Min Typ Max 0.1 100 Unit ìA ìA V V V VCE(sat) IC = 100mA, IB = 10mA fT Cob VCB = 10V, IE =-2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz hFE Classification Marking Rank hFE ZQ Q 160 260 ZR R 210 340 ZS S 290 460 www.kexin.com.cn 1