2SD1821A

S MD Type Silicon NPN Epitaxial Planar Type 2SD1821A Transistors Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 185 185 5 100 50 150 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Noixe voltage Symbol VCEO VEBO ICBO hFE Testconditons IC = 100 ìA, IB = 0 IE = 10 ìA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 10 mA 130 Min 185 5 1 330 V 150 2.3 150 MHz pF mV Typ Max Unit V V ìA VCE(sat) IC = 30 mA, IB = 3 mA fT Cob NV VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg = 100KÙ, Function = FLAT hFE Classification Marking Rank hFE Q 130 220 L R 185 330 www.kexin.com.cn 1