2SD1949

SMD S MD Type Medium Power Transistor 2SD1949 Transistors IC Features High current.(IC=5A) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 5 0.5 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=1mA VCB=30V VEB=4V VCE/IC=3V/0.01A VCE=5V , IE= -20mA , f=100MHz VCB=10V , IE=0A , f=1MHz 120 Testconditons Min 50 50 5 0.5 0.5 390 0.4 250 6.5 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=100ìA fT Cob IE=100ìA IC/IB=150mA/15mA hFE Classification Marking Rank hFE Q 120 270 Y R 180 390 www.kexin.com.cn 1