2SD1950

S MD Type NPN Silicon Epitaxia 2SD1950 Transistors Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse) * Total power dissipation Junction temperature Storage temperature * PW 10ms, duty cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 30 25 15 2 3 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage Base saturation voltage Base to emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 VCE = 5.0 V, IC = 1.0 A VCE = 5.0 V, IC = 2.0 A VCE(sat) IC = 1 A, IB = 10 mA VBE(sat) IC = 1 A, IB = 10 mA VBE fT Cob VCE = 5.0 V, IC = 300 mA VCE = 10 V, IE = -500 mA VCB = 10 V, IE = 0 , f = 1.0 MHz 600 150 800 400 0.18 0.83 660 350 26 35 0.3 1.2 700 V V mV MHz pF 1500 Min Typ Max 100 100 3200 Unit nA nA hFE Classification Marking hFE VM 800 1600 VL 1200 2400 VK 2000 3200 www.kexin.com.cn 1