2SD1998

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1998 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 30 6 3 5 1.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Diode forward voltage Base-emitter resistance Symbol IcBO hFE fT Cob Testconditons VCB = 30V , IE = 0 VCE = 2V , IC = 0.5A VCE = 2V , IC = 2A VCE = 2V , IC = 0.5A VCB = 10V , f = 1MHz 70 50 100 40 0.2 0.5 1.5 40 40 30 1.5 0.8 V kÙ MHz pF V V V V Min Typ Max 1.0 Unit ìA VCE(sat) IC = 2A , IB = 100mA VBE(sat) IC = 2V , IB = 100mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO VF RBE IC = 10ìA , RBE = IC = 10mA , RBE = IF = 0.5A Marking Marking DM www.kexin.com.cn 1