S MD Type
Low VCE(sat) Transistor 2SD2098
SOT-89
+0.1 4.50-0.1 +0.1 1.80-0.1
Transistors
Unit: mm
+0.1 1.50-0.1
Features
Excellent DC current gain characteristics.
+0.1 4.00-0.1
Low VCE(sat).
1
NPN silicon transistor.
+0.1 0.48-0.1
2
3
+0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1
+0.1 2.50-0.1
2.60
+0.1 -0.1
+0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 6 5 0.5 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=40V VEB=5V 0.3 120 150 30 Testconditons Min 50 20 6 0.5 0.5 1.0 390 MHz pF Typ Max Unit V V V ìA ìA V
VCE(sat) IC=4 A, IB=0.1A hFE fT Cob VCE=2V, IC=0.5A VCE=6V, IE= -50mA, f=100MHz VCB=20V, IE=0A, f=1MHz
hFE Classification
Marking Rank hFE Q 120 270 DJ R 180 390
+0.1 -0.1
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