2SD2099

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD2099 Features Contains input resistance (R1), base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 30 6 3 5 1.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter on state voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Diode forward voltage Base-emitter resistance Base resistance Symbol IcBO hFE fT Cob Testconditons VCB = 30V , IE = 0 VCE = 2V , IC = 0.5A VCE = 2V , IC = 2A VCE = 2V , IC = 0.5A VCB = 10V , f = 1MHz 70 50 100 40 0.12 0.7 40 40 30 1.5 0.8 60 90 120 V kÙ Ù 1.5 0.3 4.0 MHz pF V V V V Min Typ Max 1.0 Unit ìA VCE(sat) IC = 1A , IB = 50mA VBE(ON) VCE = 2V , IC = 1A V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO VF RBE R1 IC = 10ìA , RBE = IC = 10mA , RBE = IF = 0.5A Marking Marking DL www.kexin.com.cn 1