2SD2114K

SMD S MD Type Power Transistor 2SD2114K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High DC current gain. High emitter-base voltage. Low VCE (sat). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 25 20 12 0.5 1* 0.2 150 -55 to +150 W Unit V V V A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance * Transition frequency Output On-resistance * Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=10ìA IC=1mA IE=10ìA VCB=20V VEB=10V 0.18 820 350 8.0 0.8 Testconditons Min 25 20 12 0.5 0.5 0.4 2700 MHz pF Ù Typ Max Unit V V V ìA ìA V VCE(sat) IC/IB=500mA/20mA hFE fT Cob Ron VCE=3V, IC=10mA VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0, f=1MHz IB=1mA, Vi=100mV(rms), f=1kHz hFE Classification Marking Rank hFE V 820 1800 BB W 1200 2700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1