2SD2118

S MD Type Low VCE(sat) Transistor 2SD2118 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low VCE(sat). Excellent DC current gain characteristics. +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 NPN silicon transistor. +0.2 9.70 -0.2 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation TC = 25 Junction temperature Storage temperature * Pw=10ms. Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 50 20 6 5 10 10 1 10 150 -55 to +150 Unit V V V A (DC) A(Pulse)* A W W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=40V VEB=5V 0.3 120 150 30 Testconditons Min 50 20 6 0.5 0.5 1.0 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=4 A, IB=0.1A hFE fT Cob VCE=2V, IC=0.5A VCE=6V, IE= -50mA, f=100MHz VCB=20V, IE=0A, f=1MHz hFE Classification Rank hFE Q 120 270 R 180 390 3 .8 0 www.kexin.com.cn 1