2SD2122S

S MD Type Silicon NPN Epitaxial 2SD2122S TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 5.55 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature *1 . Value at TC = 25 Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg Rating 180 120 5 1.5 3 18 150 -55 to +150 Unit V V V A A A Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance *Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE fT Cob Testconditons IC = 1 mA, IE = 0 IC = 10 mA, RBE = IE= 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA* VCE = 5 V, IC = 500 mA* IC= 500 mA,IB = 50 mA* VCE = 5 V, IC = 150 mA* VCE = 5 V, IC = 150 mA* VCB = 10 V, IE = 0,f = 1 MHz 180 14 60 30 1 1.5 V V MHz pF Min 180 120 5 10 200 Typ Max Unit V V V ìA A hFE Classification Rank hFE B 60 to 120 C 100 to 200 3 .8 0 www.kexin.com.cn 1