2SD2167

S MD Type Power Transistor 2SD2167 Transistors Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W (on 40 40 0.7mm ceramic board) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 31 4 31 4 5 2 3 Collector power dissipation Junction temperature Storage temperature *1 Pw=20ms , duty=1/2 *2 When mounted on a 40 x 40 x 0.7 mm ceramic board. PC Tj Tstg 0.5 2 150 -55 to +150 A Unit V V V DC) A(Pulse)*1 W W *2 www.kexin.com.cn 1 SMD Type 2SD2167 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob IC=50ìA IC=1mA IE=50ìA VCB=20V VEB=5V IC=2A, IB=0.2A IC=1A, IB=50mA VCE=3V, IC=0.5A VCE=3V, IE= -0.5A, f=30MHz VCB=10V, IE=0A, f=1MHz Testconditons Transistors Min 27 27 5 Typ Max Unit V V V 1 1 1 0.25 56 100 25 0.5 270 ìA ìA V V MHz pF hFE Classification Marking Rank hFE N 56 120 DL P 82 180 Q 120 270 2 www.kexin.com.cn