2SD2185

S MD Type Silicon NPN Epitaxial Planar Type 2SD2185 Transistors Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 50 5 3 4 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = 10 ìA, IE = 0 IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 20 V, IE = 0 VCE = 2 V, IC = 200 mA VCE = 2 V, IC = 1.0 A VCE(sat) IC = 1 A, IB = 50 mA VBE(sat) IC = 1 A, IB = 50 mA fT Cob VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 120 80 0.15 0.85 120 20 35 0.3 1.2 V V MHz pF Min 50 50 5 0.1 340 Typ Max Unit V V V ìA hFE Classification Marking Rank hFE R 120 240 1H S 170 340 www.kexin.com.cn 1