2SD2199

S MD Type Switching Applications 2SD2199 Transistors TO-263 + .1 1 .2 7 -00.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Surface mount type device making the following possible. Low collector-to-emitter saturation voltage. + .2 8 .7 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 6 7 12 1.65 150 -55 to +150 Unit V V V A A W 5 .6 0 1 : Base 2 : Collector 3 : Emitter www.kexin.com.cn 1 SMD Type 2SD2199 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Storage time Symbol IcBO IEBO hFE fT Testconditons VCB = 40V , IE = 0 VEB = 4V , IC = 0 VCE = 2V , IC = 1A VCE = 2V , IC = 5A VCE = 5V , IC = 1A Transistors Min Typ Max 0.1 0.1 Unit mA mA 70 30 10 280 MHz 0.4 V V V V VCE(sat) IC = 4A , IB = 0.4A V(BR)CBO IC = 1mA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 1mA , IC = 0 ton tstg 60 50 6 0.2 0.3 ìs ìs Fall time tf 0.9 ìs hFE Classification Rank hFE Q 70 140 R 100 200 140 S 280 2 www.kexin.com.cn