2SD2210

S MD Type Silicon NPN Epitaxial Planar Type 2SD2210 Transistors Features Low collector-emitter saturation voltage VCE(sat) Low on resistance ron. High forward current transfer ratio hFE. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 1 0.5 1 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SD2210 Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE Testconditons VCB = 25 V, IE = 0 IC = 10 ìA, IE = 0 IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCE = 2 V, IC = 0.5 A Transistors Min Typ Max 1 Unit ìA V V V 25 20 12 200 0.13 800 0.4 1.2 200 10 VCE(sat) IC = 0.5 A, IB = 20 mA VBE(sat) IC = 0.5 A, IB = 20 mA fT Cob VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz V V MHz pF ON resistance Ron 1.0 Ù hFE Classification Marking Rank hFE R 200 350 IK S 300 500 T 400 800 2 www.kexin.com.cn