2SD2211

S MD Type Power Transistor 2SD2211 Transistors Features High breakdown voltage.(BVCEO = 160V) Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ) Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Pw=200msec duty=1/2 *2 When mounted on a 40 X 40 X 0.7mm ceramic board. Symbol VCBO VCEO VEBO IC IC PC Tj Tstg Rating 160 160 5 1.5 3 0.5 2*2 150 -55 to 150 Unit V V V A(DC) A(Pulse)*1 W W www.kexin.com.cn 1 SMD Type 2SD2211 Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob IC = 50ìA IC = 1mA IE = 50ìA VCB = 120V VEB = 4V IC/IB = 1A/0.1A IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz 120 Testconditons Min 160 160 5 Transistors Typ Max Unit V V V 1 1 2 1.5 390 80 20 ìA ìA V V MHz pF hFE Classification Marking Rank hFE DQQ Q 120 270 DQR R 180 390 2 www.kexin.com.cn