2SD2228

SMD S MD Type NPN Silicon Epitaxia 2SD2228 Transistors IC Features High dc current. Low collector saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Ic PT Tj Tstg Rating 25 16 6 500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base to emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 16 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 1.0 V, IC = 100 mA 100 200 45 200 600 50 15 650 Min Typ Max 100 100 600 100 300 700 mV mV mV MHz pF Unit nA nA VCE(sat) 1 IC = 100 mA, IB = 10 mA VCE(sat) 2 IC = 500 mA, IB = 20 mA VBE fT Cob VCE = 1.0 V, IC = 10 mA VCE = 3.0 V, IE = -100 mA VCB = 10 V, IE = 0 , f = 1.0 MHz hFE Classification Marking hFE D42 110 240 D43 190 320 D44 270 400 D45 350 600 www.kexin.com.cn 1