2SD2230

SMD S MD Type NPN Silicon Epitaxia 2SD2230 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High hFE and high current. Low VCE(sat). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current(dc) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ID PT Tj Tstg Rating 16 16 5 500 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base to emitter voltage * Collector saturation voltage Output capacitance Gain bandwidth product * Pulsed: PW 350 µs, duty cycle 2% Symbol ICBO IEBO hFE 1 hFE 2 VBE Testconditons VCB = 16 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 1.0 V, IC = 100 mA VCE = 1.0 V, IC = 500 mA VCE = 1.0 V, IC = 10 mA 200 200 550 33 150 700 50 200 15 50 mV mV mV pF MHz Min Typ Max 100 100 Unit nA nA VCE(sat) 1 IC = 100 mA, IB = 10 mA VCE(sat) 2 IC = 500 mA, IB = 20 mA Cob fT VCB = 10 V, IE = 0 , f = 1.0 MHz VCE = 1.0 V, IE = -100 mA Marking Marking D46 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1