2SD2357

S MD Type Silicon NPN Epitaxial Planar Type 2SD2357 Transistors Features Low collector-emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 10 10 5 1.2 1 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE Testconditons VCB = 7 V, IE = 0 IC = 10 ìA, IE = 0 IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCE = 2 V, IC = 100 mA 10 10 5 200 800 0.15 120 30 V MHz pF Min Typ Max 1 Unit ìA V V V VCE(sat) IC = 500 mA, IB = 5 mA fT Cob VCB = 5 V, IE = -50 mA, f = 200 MHz VCB = 5 V, IE = 0, f = 1 MHz Marking Marking 1M www.kexin.com.cn 1