2SD2402

S MD Type NPN Silicon Epitaxia 2SD2402 Transistors Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Base current Base current (pulse) * Total power dissipation Junction temperature Storage temperature * PW 10 ms, duty cycle 50 % Symbol VCBO VCEO VEBO IC ICP IB IBP PT Tj Tstg Rating 50 30 6 5 8 0.2 0.4 2 150 -55 to +150 Unit V V V A A A A W www.kexin.com.cn 1 SMD Type 2SD2402 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base to emitter voltage * Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE 1 hFE 2 VBE Testconditons VCB = 50 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 1.0 V, IC =1.0 A VCE = 1.0 V, IC = 2.0 A VCE = 1.0 V, IC = 0.1 A Transistors Min Typ Max 100 100 Unit nA nA 80 100 600 200 650 140 230 0.88 170 60 275 485 45 400 700 300 500 1.2 mV mV mV V MHz pF ns ns ns VCE(sat) 1 IC = 3 V, IB = 0.15 A VCE(sat) 2 IC = 5 V, IB = 0.25 A VBE(sat) IC = 3 V, IB = 0.15 A fT Cob ton tstg tf VCE = 10 V, IE = -0.5 A VCB = 10 V, IE = 0 , f = 1.0 MHz IC = 2.0 A, VCC= 10 V IB1 = -IB2 = 0.1 A RL = 500Ù hFE Classification Marking hFE EX 100 200 EY 160 320 EZ 200 400 2 www.kexin.com.cn