2SD2459

S MD Type Silicon NPN epitaxial planer type 2SD2459 Transistors Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 2 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Rating 150 150 5 1.5 1 1 150 -55 to +150 Unit V V V A A W * Printed circuit board: Copper foil area of 1cm or more, and the board thickness of 1.7mm for the collector portion www.kexin.com.cn 1 SMD Type 2SD2459 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Testconditons VCB = 75V, IE = 0 IC = 10ìA, IE = 0 IC = 1mA, IB = 0 IE = 10ìA, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA IC = 500mA, IB = 25mA* IC = 500mA, IB = 25mA* VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 150 150 5 120 40 Min Transistors Typ Max 0.1 Unit ìA V V V 340 0.11 0.8 90 12 0.3 1.2 V V MHz 20 pF hFE Classification Marking Rank hFE 2ER R 120 240 2ES S 170 340 2 www.kexin.com.cn