2SD2474

S MD Type Silicon NPN Epitaxial Planar Type 2SD2474 Transistors Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 10 10 7 2.4 2 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE Testconditons VCB = 7 V, IE = 0 IC = 10 ìA, IE = 0 IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCE = 2 V, IC = 200 mA 10 10 7 200 0.19 60 100 800 0.25 V MHz pF Min Typ Max 1 Unit ìA V V V VCE(sat) IC = 1 A, IB = 10 mA fT Cob VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz Marking Marking 2F www.kexin.com.cn 1