2SD2537

S MD Type Medium Power Transistor 2SD2537 Transistors Features High DC current gain. High emitter-base voltage. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 25 12 1.2 2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=10ìA IC=1mA IE=10ìA VCB=30V VEB=12V Testconditons Min 30 25 12 0.3 0.3 0.3 820 200 20 2700 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=500mA, IB=10mA hFE fT Cob VCE=5V, IC=0.5A VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE V 820 1800 DV W 1200 2700 www.kexin.com.cn 1