2SD596

SMD S MD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 High dc current gain. hFE:200TYP. (VCE=1V, IC=100mA) +0.1 1.3-0.1 Micro package. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 25 5 700 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base to emitter voltage * Collector saturation voltage * Output capacitance Gain bandwidth product * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = 30 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 1.0 V, IC = 100 mA VCE = 6.0 V, IC = 10 mA 110 600 200 640 0.22 12 170 Min Typ Max 100 100 400 700 0.6 mV V pF MHz Unit nA nA VCE(sat) IC = 700 mA, IB = 70 mA Cob fT VCB = 6.0 V, IE = 0, f = 10 MHz VCE = 6.0 V, IE = -10 mA hFE Classification Marking Rank hFE 1 110 180 2 135 220 DV 3 170 270 4 200 320 5 250 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1