2SD601A

SMD S MD Type Silicon NPN Epitaxial Planer Type 2SD601A SOT-23 Transistors IC Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 High foward current transfer ratio hFE. +0.1 2.4-0.1 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 7 100 200 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base current Collector-emitter current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol VCBO VCEO VEBO ICBO ICEO hFE Testconditons IC = 20 ìA, IE = 0 IC = 2 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 20 V, IE = 0 A VCE = 10 V, IB = 0 A VCE = 10 V, IC = 2 mA 160 0.1 150 3.5 110 Min 60 50 7 0.1 100 460 0.3 V MHz pF mV Typ Max Unit V V V ìA ìA VCE(sat) IC = 100 mA, IB = 10 mA fT Cob NV VCB = 10 V, IE = -2 mA , f = 200 MHz VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kW, Function = FLAT hFE Classification Marking hFE ZQ 160 260 ZR 210 340 ZS 290 460 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1