2SD602

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SD602 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 30 25 5 500 1 200 150 -55 to +150 Unit V V V mA A mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = 10 ìA, IE = 0 IC = 10 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA 85 160 0.35 200 6 15 Min 30 25 5 0.1 340 0.6 V MHz pF Typ Max Unit V V V ìA VCE(sat) IC = 300 mA, IB = 30 mA fT Cob VCB = 10 V, IE = -50 mA , f = 200 MHz VCB = 10V , IE = 0 , f = 1.0MHz hFE Classification Marking hFE WQ 85 170 WR 120 240 WS 170 340 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1