2SD780A

SMD S MD Type NPN Silicon Epitaxia 2SD780A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Micro package. High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 80 80 5.0 300 200 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base to emitter voltage * Collector saturation voltage * Output capacitance Gain bandwidth product * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = 50 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 1.0 V, IC = 50 mA VCE = 6.0 V, IC = 10 mA 110 600 200 645 0.15 7.0 140 Min Typ Max 100 100 400 700 0.6 mV V pF MHz Unit nA nA VCE(sat) IC = 300 mA, IB = 30 mA Cob fT VCB = 6.0 V, IE = 0 , f = 1.0 MHz VCE = 6.0 V, IE = -10 mA hFE Classification Marking hFE D51 110 180 D52 135 220 D53 170 270 D54 200 320 D55 250 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1