2SD814A

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High collector-emitter voltage VCEO Low noise voltage NV +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD814 2SD814A Collector-emitter voltage 2SD814 2SD814A Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating 150 185 150 185 5 50 100 200 150 -55 to +150 Unit V V V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Collector-emitter voltage 2SD814 2SD814A Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise voltage VEBO hFE IE = 10 ìA, IC = 0 VCE = 5 V, IC = 10 mA Symbol ICBO VCEO Testconditons VCB = 100 V, IE = 0 IC = 100 ìA, IB = 0 150 185 5 90 330 1 150 2.3 150 V MHz pF mV Min Typ Max 1 Unit ìA V V V VCE(sat) IC = 30 mA, IB = 3 mA fT Cob NV VCE = 10 V, IC = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 k? , Function = FLAT hFE Classification Marking Rank hFE 2SD814 2SD814A PQ LQ Q 90 155 PR LR R 130 220 PS LS S 185 330 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1