2SD875

S MD Type Silicon NPN Epitaxial Planar Type 2SD875 Transistors Features Large collector power dissipation PC. High collector-emitter voltage (Base open) VCEO. Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 80 5 0.5 1 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = 10 ìA, IE = 0 IC = 100 ìA, IB = 0 IE = 10 ìA, IC = 0 VCB = 20 V, IB = 0 VCE = 10 V, IC = 150 mA 130 0.2 0.85 120 11 20 Min 80 80 5 0.1 330 0.4 1.2 Typ Max Unit V V V ìA ? V V MHz pF VCE(sat) IC = 300 mA, IB = 30 mA VBE(sat) IC = 300 mA, IB = 30 mA fT Cob VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE R 130 220 X S 185 330 www.kexin.com.cn 1