2SD882-P

Transistors SMD Type NPN Transistors 2SD882 Features 1.70 0.1 Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current to Continuous IC 3 A W Collector Dissipation Pc 0.5 Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=100uA ,IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 10 mA , IB=0 30 V Emitter-base breakdown voltage VEBO IE= 100 uA ,IC=0 6 Collector cut-off current ICBO VCB=40 V , IE=0 1 uA Collector cut-off current ICEO VCE=30 V , IB=0 10 uA Emitter cut-off current IEBO VEB=6V , IC=0 1 uA DC current gain hFE VCE= 2V, IC= 1A 60 VCE=2V, IC= 100mA 32 V 400 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V Transition frequency fT VCE=5 V, IC=0.1mA,f = 10MHz 50 MHz Ƶ Classification of hfe(1) Type 2SD882-R 2SD882-Q 2SD882-P 2SD882-E Range 60-120 100-200 160-320 200-400 Marking ' www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD882 Ƶ Typical Characterisitics Static Characteristic 2.00 10mA 9mA COLLECTOR CURRENT IC (A) 1.75 hFE 1000 —— IC COMMON EMITTER Ta=25 ć 8mA DC CURRENT GAIN hFE 7mA 1.50 6mA 5mA 1.25 4mA 1.00 3mA 0.75 Ta=100ć Ta=25ć 100 2mA 0.50 0.25 COMMON EMITTER VCE= 2V IB=1mA 0.00 10 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 8 1 10 100 COLLECTOR CURRENT IC VBEsat 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 7 VCE (V) 100 Ta=100 ć 10 Ta=25ć —— 1000 IC IC  1000 Ta=25ć Ta=100 ć ȕ=10 ȕ=10 1 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 10 100 COLLECTOR CURREMT (mA) Cob/Cib VBE —— 1000 IC 3000 (mA) VCB/VEB 500 f=1MHz IE=0/IC=0 1000 T= a 25 ć 100 CAPACITANCE C (pF) Ta=25 ć T= a 10 0ć COLLECTOR CURRENT IC (mA) 3000 (mA) 10 Cib 100 Cob COMMON EMITTER VCE= 2V 1 0 300 600 900 1200 PC COLLECTOR POWER DISSIPATION PC (mW) 600 —— Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 2 www.kexin.com.cn 100 Ta 125 (ć) 10 0.1 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 150 10 V (V) 20