2SD882

S MD Type NPN Silicon Power Transistor 2SD882 Transistors Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current to Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ Tstg Rating 40 30 6 3 0.5 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Testconditons Ic=100uA ,IE=0 IC= 10 mA , IB=0 IE= 100 uA ,IC=0 VCB=40 V , IE=0 VCE=30 V , IB=0 VEB=6V , IC=0 VCE= 2V, IC= 1A VCE=2V, IC= 100mA IC=2A, IB= 0.2A IC=2A, IB= 0.2A VCE=5 V, IC=0.1mA,f = 10MHz 50 60 32 0.5 1.5 V V MHz Min 40 30 6 1 10 1 400 Typ Max Unit V V V uA uA uA hFE Classification Rank hFE R 60 120 O 100 200 P 160 320 E 200 400 www.kexin.com.cn 1