2SD965

SMD S MD Type Silicon NPN epitaxial planar type 2SD965 Transistors IC Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 0.75 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Collector-emitter cutoff current Emitter-base cutoff current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symbol VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) Cob fT Testconditons IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VEB = 7V, IC = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2A IC = 3A, IB = 0.1 A VCB = 20 V, IE = 0, f = 1 MHz VCB = 6 V, IE = -50 mA, f = 200 MHz 150 230 150 1 50 V pF MHz Min 20 7 0.1 1 0.1 600 Typ Max Unit V V A A A hFE Classification Marking hFE 230 Q 380 340 R 600 www.kexin.com.cn 1