2SD968A

S MD Type Silicon NPN epitaxial planer type 2SD968, 2SD968A Transistors Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage 2SD968 2SD968A Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 2 Symbol VCBO Rating 100 120 Unit V V V V V A A W VCEO VEBO ICP IC PC * Tj Tstg 100 120 5 1 0.5 1 150 -55 to 150 * Printed circuit board: Copper foil area of 1cm or more, and the board thickness of 1.7mm for the collector portion www.kexin.com.cn 1 SMD Type 2SD968, 2SD968A Electrical Characteristics Ta = 25 Parameter Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement Symbol VCEO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Testconditons IC = 100ìA, IB = 0 IC = 100ìA, IB = 0 IE = 10ìA, IC = 0 VCE = 10V, IC = 150mA* VCE = 5V, IC = 500mA* IC = 500mA, IB = 50mA* IC = 500mA, IB = 50mA* VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Min 100 120 5 90 50 Transistors Typ Max Unit V V V 220 100 0.2 0.85 120 11 20 0.6 1.2 V V MHz pF hFE Classification Marking Symbol Rank hFE 2SD968 2SD968A WQ VQ Q 90 155 WR VR R 130 220 2 www.kexin.com.cn