2SD992-Z

S MD Type NPN Silicon Epitaxial Transistor 2SD992-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total power dissipation Junction temperature Storage temperature * Pulse Test PW 10ms, Duty Cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 30 30 5 2 3 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO hFE Testconditons VCB = 20 V, IE = 0 VCE = 0.5 V, IC = 0.1 A VCE = 0.5 V, IC = 2.0 A VCE(sat) IC = 2.0 A, IB = 40 mA VBE(sat) IC = 2.0 A, IB = 40 mA 35 50 0.3 0.95 0.5 1.5 V V Min Typ Max 10 200 Unit nA hFE Classification Marking hFE N 35 80 M 60 120 L 80 120 K 100 200 3 .8 0 www.kexin.com.cn 1