2SJ0582

SMD S MD Type Silicon P-channel power MOSFET 2SJ0582 Transistors IC Features Avalanche energy capability guaranteed High-speed switching No secondary breakdown +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Peak Drain Current Avalanche Energy Capability * Power Dissipation TC = 25 Power Dissipation Channel Temperature Storage Temperature * L = 5 mH, IL = 2 A, 1 pulse Symbol VDSS VGSS ID IDP EAS PD PD Tch Tstg Rating -200 20 2 4 10 10 1 150 -55 to +150 Unit V V A A mJ W W 3.80 www.kexin.com.cn 1 SMD Type 2SJ0582 Electrical Characteristics Ta = 25 Parameter Drain Cut-off Current Gate Leakage Current Drain-Source Surrender Voltage Gate Threshold Voltage Drain to Source On-state Resistance Forward Transfer Admittance Diode Forward Voltage Input Capacitance Output Capacitance Feedback Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol IDSS IGSS VDSS Vth Testconditons VDS = -160 V, VGS = 0 VGS = 20 V, VDS = 0 Transistors IC Min Typ Max -10 10 Unit A A V ID = -1 mA, VGS = 0 VDS = -25 V, ID = -1 mA -200 -2 1.5 1 1.7 1.4 400 -4 2.0 V RDS(on) VGS = -10 V, ID = -1.0 A Yfs VDF Ciss Coss Crss td(on) tr td(off) tf Rth(ch-c) Rth(ch-a) VDD = 100 V, ID = -1.0 A, RL = 100 VGS = -10 V VDS = -20 V, VGS = 0, f = 1 MHz VDS = -25 V, ID = -1.0 A IDR = -2.0 A, VGS = 0 S V pF pF pF ns ns ns ns 12.5 125 /W /W 55 25 12 15 25 50 Marking Marking J0582 2 www.kexin.com.cn