2SJ166

S MD Type MOS Fied Effect Transistor 2SJ166 SOT-23 MOSFET Unit: mm Directly driven by Ics having a 5V poer supply. +0.1 2.4-0.1 Not necessary to consider dreving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Total power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PT Tch Tstg Rating -50 7.0 100 200 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-50V,VGS=0 VGS= 7.0V,VDS=0 A -1.0 30 -2.1 50 18 18 VDS=-5.0V,VGS=0,f=1Mhz 11 3 40 VGS(on)=-5.0V,RG=10 20mA RL=250 ,VDD=-5.0V,ID=58 62 62 50 pF pF pF ns ns ns ns Min Typ Max -10 1.0 -3.0 Unit A A V ms VGS(off) VDS=-5.0V,ID=-1.0 Yfs VDS=-5.0V,ID=-20mA RDS(on) VGS=-4.0V,ID=-20mA Ciss Coss Crss td(on) tr td(off) tf Marking Marking H11 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1