2SJ179

S MD Type MOS Fied Effect Transistor 2SJ179 SOT-89 MOSFET Unit: mm +0.1 1.50-0.1 Features Directly driven by Ics having a 5V poer supply. Has low on-stage resistance RDS(on)=1.5 RDS(on)=1.0 MAX.@VGS=-4.0V,ID=-0.5A +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Bidircetional Zener Diode for protection is incorporated betweent Gate and Source Inductive loads can be driven without protective circuit thanks to +0.1 3.00-0.1 +0.1 0.80-0.1 MAX.@VGS=-10V,ID=-0.5A 1 +0.1 0.48-0.1 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 0.40 the and Source. 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate +0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -30 20 1.5 3.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-30V,VGS=0 VGS= 20V,VDS=0 -1.0 0.4 0.8 0.4 210 VDS=-10V,VGS=0,f=1Mhz 130 3 35 VGS(on)=-10V,RG=10 0.5A RL=50 ,VDD=-25V,ID=70 380 200 1.5 1.0 pF pF pF ns ns ns ns -2.2 Min Typ Max -10 1.0 -3.0 Unit A A V s VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-0.5A VGS=-4.0V,ID=-0.5A VGS=-10V,ID=-0.5A Marking Marking PA www.kexin.com.cn 1