2SJ181S

S MD Type P-Channel MOS FET For High-Speed Switching 2SJ181S TO-252 MOSFET Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-resistance High speed switching +0.2 9.70-0.2 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 Suitable for switching regulator and DC-DC converter +0.28 1.50-0.1 +0.25 2.65-0.1 No secondary breakdown 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Low drive current 0.127 max +0.15 5.55-0.15 +0.1 0.60-0.1 1Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Drain peak current * Channel dissipation (Tc=25 Channel temperature Storage temperature * PW 10 ìs, duty cycle 1% ) Symbol VDSS VGSS ID(DS) ID(pulse) Pch Tch Tstg Rating -600 15 -0.5 -1 20 150 -55 to +150 Unit V V A A W 3.80 www.kexin.com.cn 1 SMD Type 2SJ181S Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static Drain to source on stateresistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Symbol VDSS VGSS IGSS IDSS Testconditons ID = -10 mA, VGS = 0 IG = VGS = 100 A, VDS = 0 Min -600 15 MOSFET Typ Max Unit V V 12 V, VDS = 0 10 -100 -2 15 0.3 0.45 220 55 13 -4 25 µA µA V VDS = -500 V, VGS = 0 VGS(off) ID = -1 mA, VDS = -10 V RDS(on) ID = -0.3 A, VGS = -10 V |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr IF = -0.5 A, VGS = 0 IF = -0.5 A, VGS = 0, diF/dt = 50 A/ s ID = -0.3 A, VGS = -10 V, RL = 100 Ù ID = -0.3 A, VDS = -20 V VDS = -10 V, VGS = 0, f = 1 MHz S pF pF pF ns ns ns ns V ns 7 20 35 35 -0.85 230 2 www.kexin.com.cn