2SJ185

S MD Type MOS Fied Effect Transistor 2SJ185 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor +0.1 1.3-0.1 Directly driven by Ics having a 3V poer supply. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Operating temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Topt Tstg Rating -50 7.0 100 200 200 -55 to +80 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-50V,VGS=0 VGS= 7.0V,VDS=0 A -1.2 20 -1.6 42 25 13 22 VDS=-3V,VGS=0,f=1MHZ 12 4 80 VGS(on)=-3V,RG=10 20mA RL=150 ,VDD=-3V,ID=230 40 70 40 20 pF pF pF ns ns ns ns Min Typ Max -10 5 -2.0 Unit A A V ms VGS(off) VDS=-3V,ID=-1 Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-3V,ID=-10mA VGS=-2.5V,ID=-1mA VGS=-4.0V,ID=-10mA Marking Marking H12 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1